Sub - 1100 nm lasing from post - growth intermixed InAs / GaAs quantum - dot lasers
نویسنده
چکیده
Impurity free vacancy disordering induced highly intermixed InAs/ GaAs quantum-dot lasers are reported with high internal quantum efficiency (>89%). The lasers are shown to retain the device characteristics after intermixing and emitting in the important wavelength of ∼1070–1190 nm. The non-coated facet Fabry-Pērot post-growth wavelength tuned lasers exhibits high-power (>1.4W) and high-gain (∼50 cm), suitable for applications in frequency doubled green– yellow–orange laser realisation, gas sensing, metrology etc.
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